Valence Band
Conduction Band
Discovery of the
Photoelectric Effect
In 1887, Henrich Hertz (Germany;1857),
was studying electromagnetic waves
propagation at the University of
Karlsruhe. He observed for the first time
the photoelectric effect when noticing
the change of voltage required to create
a spark between two metal electrodes
after UV exposure.
Analytical Equipment
Wilhelm Röntgen, born in Germany in
1845, discovered X-ray in 1895 while
performing his research on electrical
rays at the University of Würzburg.
This discovery earned him the Nobel
Prize of Physics in 1901.
Photoelectric
Effect Theory
It is not until 1905 that the
theory behind Hertz’s
observation would be
formalized by Albert Einstein,
(Germany;1879) while he was
completing his PhD at the
University of Zurich. He won
the Nobel prize for that in 1921.
Discovery of X-ray
Following almost 20 years of research at the
University of Uppsala, Kai Siegbahn, born in
Sweden in 1918, published a very detailed paper
on XPS also known as “electron spectroscopy for
chemical analysis” (ESCA). This work would be
recognized by the Nobel Prize in 1981.
1895
1905
1967
1887
1969
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APPLICATIONS
X-Ray Photoelectron Spectroscopy (XPS):
Following a collaboration with
Siegbahn Hewlett-Packard
introduced the first
commercially available
XPS in 1969.
First Commercial
Equipment
Energy Level Diagram of XPS Process
Why do engineers, medical doctors, and scientists need XPS?
For many industrial processes, surface contamination is the number one source of process
variability. Cleanrooms exist to prevent dust and any other particles from coating
semiconductor components. Surgeons scrub thoroughly to prevent germs and dust from
being on their hands. Surface scientists sputter or plasma clean to improve their depositions
onto their substrates. How clean a surface is, has a large impact on the quality of delivered
products.
As new technologies such as 5G enter production, thin films and their interfaces are having
more impact on the device properties than ever before. Measuring film composition, and
chemical bonding states are pivotal to continue to drive innovation in the semiconductor
industry.
XPS serves many industries in addition to semiconductors. It is widely used for both organic
(bio and medical) and inorganic (semiconductor, photovoltaic, and LED) materials for new
development, process control, and failure analysis. XPS is also a strong tool for the study of
specialty materials like carbon nanotubes and graphene.
At the highest level, XPS serves as a chemical fingerprinting technique to identify surface
atoms along with their chemical bonding states. When coupled with Argon (Ar) sputtering,
XPS can destructively measure composition and chemical bonding as a function of depth. We
will go through a few of the basic details followed by brief introductions to more advanced
XPS modes.
The basic XPS setup is as follows: X-ray (high energy light source) is directed to the sample
surface and cause photoelectrons to be emitted. Photoelectrons are energized electrons that
are emitted from the surface when it is exposed to X-ray whose energy is above the threshold
energy. Those photoelectrons are then captured, and their energies (the difference between
the X-ray energy and the binding energy) are measured to determine which type of elements
are present on the surface.
Every element on the periodic table has a different number of electrons and the easiest
electron to remove is the outermost one. Energy level for each electron vary by electron
orbital and the chemical bonding of the sample. These basic concepts support the fact that
there is a semi-unique fingerprint for every element in the periodic table. Some peaks overlap
in energy between elements but it is usually still possible to determine elemental composition.
Reading XPS Spectra
Typical XPS spectra have counts on the y-axis which represent the number of electrons
impacting the detector. The relative height differences that trace out peaks is important, not
the absolute counts. From a software side, the measured peak height and position are
compared with a library of reference spectra to identify the material present. Most elements
can be detected down to 0.1 atm % with a strong X-ray source or repeated sweeping counts.
Energy
Chemical Bonding Information by Peak Deconvolution
Sometimes XPS spectra contains overlapping signals, these are evident with asymmetry in
peak shape, double peaks or long shelves. To extract the most meaningful data from these
overlapped spectra a process known as deconvolution is used. Deconvolution is a
mathematical approach that uses individual peaks of known shape to fit the larger composite
peak. Deconvolution along with library of known XPS peaks for chemical bonding states,
allows for the individual peaks that makes up the composite peak to be separated. In the
above example, the measured carbon peak at 284.25 eV is refined into its component peaks
at 284 eV, 285 eV and a small peak at 286.5 eV which represents different chemical bonding
states. With a good library of peak positions and a high intensity X-ray source, XPS can give
powerful insights into materials.
Depth Profiling by XPS
XPS is typically performed in a vacuum environment to minimize the chance of the
photoelectrons colliding with anything other than the detector. Most systems are also outfitted
with a sputtering beam, typically Ar, to clean the surface and perform XPS as a function of
depth. This is useful if the layer of interest is not directly at the surface. X-rays penetrate deep
into materials ~1 µm but only electrons emitted near the top 10 nm surface make it to the
detector. By coupling XPS with the sputtering Ar ion beam, XPS can generates depth profiles
of chemical composition and bonding states which is a very powerful information to
understand thin film materials and their interfaces.
XPS for Graphene
The XPS spectrum contains Auger signals at high binding energy, which can be used for
better understanding of the sample materials. In case of carbon material, XPS spectrum
generate an Auger peak near 1225 eV. The D-parameter value (peak to valley distance of
carbon’s Auger peak) is well known for diamond (sp3) and graphite (sp2), the measured
D-parameter of the sample material the ratio of sp3 and sp2 bonding states can be estimated.
X-ray
Diamond
D-parameter
D-parameter
Graphite
Material
Graphite
Diamond
D-parameter / eV
Graphite
Diamond
Differentiated X-ray induced C KLL
spectra from graphite and diamond
1240 1230 1220 1210
Binding Energy (eV)

X-ray Photoelectron Spectroscopy

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State-of-the-art XPS tool for fast aquisition of high quality data
Elemental peak deconvolution for chemical bonding states
Integrated reports with analysis of measured data
Seamlessly combined with other metrology such
as SIMS, Auger, RBS, nano-FTIR, and others)
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