Secondary Ion Mass Spectrometry (SIMS)
Overview
Secondary Ion Mass Spectrometry (SIMS) is an analytical technique in which the composition of a surface is analyzed using a focused ion beam. When a solid sample is irradiated by an energetic ion beam, the sample surface fragments (atoms and molecules in both neutral or ionic forms) are ejected. The secondary ions (ions among the ejected particles) are analyzed by various mass-spectrometric techniques, which is used to classify the type of the SIMS analysis.
The types of SIMS are:
- Time-of-Flight SIMS (ToF-SIMS) separates the ions in a field-free drift path according to their velocity. Since all ions possess the same kinetic energy, the velocity and therefore time-of-flight varies according to the mass of each ionic species. This measurement is achieved by using pulsed ion beams. As it is the only analyzer type that can detect all generated secondary ionic species simultaneously, ToF-SIMS is used for applications that require thorough analysis.
- Magnetic sector SIMS (M-SIMS) uses a magnetic sector field to separate the secondary ions by their mass-to-charge ratio. It is usually used in high-speed dynamic mode for selected species. Non-selected elements are not analyzed since they do not reach the detector.
- Quadrupole mass analyzer SIMS separates the masses by resonant electric fields which allow only the selected masses to pass through the quadrupole.
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Services
- Surface analysis: To understand the components on the surface area using ToF-SIMS.
- Depth profiling: For dopant type identification and profile, diffusion profile, and trace element analysis. M-SIMS is used for relatively thick sample (0.5 ~ 10 um), while ToF-SIMS is used for shallow depth analysis (0.01 ~ 1 um).
- Large molecule (such as polymers) identification: Principal Component Analysis (PCA) method using ToF-SIMS.
- 3D Bio-imaging: For cells of an organ using PCA assisted ToF-SIMS.
Pricing
- ToF-SIMS, Surface analysis: Starts from $800/sample with 6 – 8 days of turnaround.
- ToF-SIMS, depth-profiling: Starts from $1,200/sample with 6 – 8 days of turnaround.
- M- (or D-) SIMS, depth-profiling: Starts from $400/sample with 4 – 5 days of turnaround.
- For a comprehensive overview of our pricing structure, please log in to the Bee Portal.
Equipment
- Key analytical features for solving a wide range of analytical problems
The IMS 7f-Auto offers unparalleled depth profiling capabilities with high depth resolution and high dynamic range. The high transmission mass spectrometer is combined with two reactive, high-density ion sources, O2+ and Cs+, thus providing high sputter rate and excellent detection limits. A unique optical design allows both direct ion microscopy and scanning microprobe imaging. - Improved automation & operation efficiency
The IMS 7f-Auto is equipped with a redesigned, in-line primary column for easier and faster primary beam tuning and optimized primary beam current stability. New automated routines minimize operator related biases and improve ease-of-use. A motorized storage chamber with automated load / unload of sample holders ensures high throughput through analysis chaining and remote operation. - High reproducibility at high throughput
Thanks to its new motorized storage chamber & sample transfer, the IMS 7f-Auto can analyze multiple samples in chained or remote mode. Measurements can be fully unattended and automated, with unequalled throughput and reproducibility. Ultimate reproducibility can be achieved (RSD < 0.5 %), together with excellent detection limits, high throughput and productivity (tool can be used 24h a day with minimum operator intervention).
FAQ
A: SIMS is an analytical technique used to detect and measure the composition of elements and isotopes in a sample by sputtering the surface with a focused primary ion beam and analyzing the ejected secondary ions.
A: SIMS can analyze a wide range of materials including metals, semiconductors, ceramics, glasses, polymers, and biological samples.
A: SIMS is capable of depth profiling with nanometer scale resolution, allowing for the analysis of thin films, interfaces, and near-surface regions of materials.
A: SIMS is extremely sensitive and can detect elements at parts-per-billion (ppb) levels, making it ideal for trace element analysis.
A: Yes, SIMS provides excellent isotopic discrimination, enabling it to differentiate between isotopes of the same element.
A: How does SIMS differ from other surface analysis techniques? SIMS offers higher sensitivity for trace elements and better depth profiling compared to techniques like X-ray photoelectron spectroscopy (XPS) or Auger electron spectroscopy (AES).
A: The primary difference lies in their detection systems. ToF-SIMS uses a time-of-flight analyzer to separate ions based on their mass-to-charge ratio, while Dynamic SIMS typically uses a quadrupole or magnetic sector analyzer.
A: Dynamic SIMS provides deeper depth profiling capabilities compared to ToF-SIMS, making it suitable for bulk analysis. ToF-SIMS, on the other hand, offers superior surface sensitivity and is more often used for surface and thin film analysis.
A: ToF-SIMS generally offers better spatial resolution than Dynamic SIMS, making it more suitable for high-resolution imaging of surfaces.